20 C 43 ghz double-balanced mixer and lo-amplifier technical data features ? both up and down- converting functions ? harmonic lo mixing capability ? large bandwidth: rf port: 20 C 43 ghz lo port match: dc C 43 ghz lo amplifier: 20 C 43 ghz if port: dc C 5 ghz ? repeatable conversion loss: 9.5 db typical at 30 ghz ? low lo drive required ?50 w port matching networks description the HMMC-3040 is a broadband mmic double-balanced mixer (dbm) with an integrated high- gain lo amplifier. it can be used as either an upconverter or as a downconverter in microwave/ millimeter-wave transceivers. if desired, the lo amplifier can be biased to function as a frequency multiplier to enable harmonic mixing of a lo source. this three-port device has input and output matching circuitry for use in 50 ohm environments. the mmic provides repeatable conversion loss (requiring no tuning), thereby making it suit- able for automated assembly processes. absolute maximum ratings [1] symbol parameters/conditions units min. max. v d1, 2 drain supply voltages v 5 v g1, 2 gate supply voltages v -3.0 0.5 i dd total drain current ma 400 p in rf input power dbm 21 t ch channel temperature [2] c +160 t a backside ambient temp. c -55 +75 t stg storage temperature c -65 +165 t max maximum assembly temp. c +300 notes: 1. absolute maximum ratings for continuous operation unless otherwise noted. 2. refer to dc specifications/physical properties table for derating information. chip size: 2520 x 730 m m (99.2 x 28.7 mils) chip size tolerance: 10 m m ( 0.4 mils) chip thickness: 127 15 m m (5.0 0.6 mils) HMMC-3040
2 HMMC-3040 dc specifications/physical properties [1] symbol parameters and test conditions units min. typ. max. v d1 , 2 drain supply operating voltages v 2 4.5 5 i d1 first stage drain supply current ma 27 (v dd = 4.5 v, v g1 @ -0.8 v) i d2 total drain supply current for stage 2 ma 123 (v dd = 4.5 v, v gg @ -0.8 v) v g1 , 2 gate supply operating voltages v -0.8 (i dd @ 150 ma) v p pinch-off voltage v -2 -1.2 -0.8 (v dd = 4.5 v, i dd 10 ma) q ch-bs thermal resistance [2] c/watt 62 (channel-to-backside at t ch = 160 c) t ch channel temperature [3] (t a = 75 c, mttf > 10 6 hrs, c 160 (v dd = 4.5 v, i dd = 300 ma) notes: 1. backside ambient operating temperature t a = 25 c unless otherwise noted. 2. thermal resistance ( c/watt) at a channel temperature t ( c) can be estimated using the equation: q (t) @ 62 x [t( c)+ 273] / [160 c + 273]. 3. derate mttf by a factor of two for every 8 c above t ch . HMMC-3040 rf specifications, t a = 25 c, z o = 50 w , v dd = 4.5 v, i dd = 150 ma symbol parameters and test conditions units min. typ. max. bw operating bandwidth rf and lo ghz 20 20-43 43 if ghz dc dc-5 5 c.l. conversion loss db 9.5 12 p lo lo drive level dbm 2 lo/rf isolation lo-to-rf isolation db 18 p -1db input power down-convert dbm 15 (@ 1 db increase in c.l.) up-convert dbm 8
3 HMMC-3040 applications the HMMC-3040 mmic is a broadband double-balanced mixer (dbm) with an integrated lo amplifier. it can be used as either a frequency up-converter or down-converter. this mixer was designed specifically for microwave/millimeter-wave point-to-point and-point-to- multipoint (including lmds/ lmcs/mvds) communication systems that operate in the 20C 43 ghz frequency range. the lo amplifier can also be biased to provide frequency multiplication of the lo source (figure 2). the integrated lo amplifier will provide a good impedance match to low fre- quency input signals. frequencies below approximately 18 ghz will not be passed by the lo network, enhancing lo rejection. biasing and operation the recommended dc bias condition is with all drains connected to a single 3.5C 4.5 volt supply and all drains connected to an adjustable negative voltage supply. the gate voltage is adjusted for a total drain supply current of typically 150 C230 ma. an assembly diagram is shown in figure 4. the lo amplifier has effectively two gain stages as indicated in figure 1. one wire connection is needed to each dc drain bias supply pad, v d1 and v d2 , and one to each dc gate bias pad, v g1 and v g2 . many biasing configurations are available when biasing the lo amplifier to function as a multi- plier. for example, when tripling a 10 ghz lo source, an effective lo amplifier bias is v d1 =v d2 =2.5v and i d1 +i d2 = 275 ma. even-order harmonics of the lo source are generated when the first stage is pinched off and v d1 =v d2 = 4.5 v with i d2 =150 C 230 ma. when operated as a multiplier, 10 C 14 dbm is generally required to drive to lo input. no imped- ance matching network is needed because the lo port provides a good match to signals having frequency from dc to approxi- mately 43 ghz. the microwave/millimeter-wave ports are not ac-coupled. a dc blocking capacitor is required on any rf port that may be exposed to dc voltages. no ground wires are needed because ground connections are made with plated through-holes to the backside of the device. assembly techniques electrical and thermal conductive epoxy die attach is the preferred assembly method. solder die attach using a fluxless gold-tin solder preform can also be used. the device should be attached to an electrically conductive surface to complete the dc and rf ground paths. the backside metallization on the device is gold. it is recommended that the electrical connections to the bonding pads be made using 0.7 C 1.0 mil diameter gold wire. the microwave/millimeter-wave connections should be kept as short as possible to minimize inductance. for assemblies requiring long bond wires, multiple wires can be attached to the rf bonding pads. thermosonic wedge is the preferred method for wire bonding to the gold bond pads. a guided-wedge at an ultrasonic power level of 64 db can be used for the 0.7 mil wire. the recom- mended wire bond stage tempera- ture is 150 2 c. for more detailed information see agilent application note #999, gaas mmic assembly and handling guidelines. gaas mmics are esd sensitive. proper precautions should be used when handling these devices. figure 1. simplified block diagram. figure 2. harmonic mixing block diagram. if dbm lo rf v d2 v g2 v d1 v g1 2 1 if dbm lo rf v d2 v g2 v d1 v g1
4 760 480 80 0 430 660 250 0 0 90 1210 0 70 330 860 1190 2020 lo rf if v g1 v gg v g2 optional i.f., wire support pads. (stitch bond connect if pad, support pad, and trans line) v d1 v dd v d2 >100 pf >100 pf >0.1 f >0.1 f figure 3. HMMC-3040 bonding pad positions. (dimensions are in micrometers) figure 4. HMMC-3040 common assembly diagram.
5 additional HMMC-3040 performance characteristics (data refer to figure 1) figure 5. up-conversion loss vs. if input power. 12 11 10 9 8 7 6 5 4 up-conversion loss (db) -20 -15 -10 -5 0 5 10 15 20 if-input power (dbm) if = 3 ghz lo = 25 ghz, 0 dbm v dd = 3.0 v, i dd = 150 ma v dd = 3.5 v, i dd = 230 ma v dd = 4.5 v, i dd = 230 ma figure 6. down-conversion loss vs. rf input power. 13 12 11 10 9 8 7 down-conversion loss (db) -30 -20 -10 0 10 20 rf-input power (dbm) v dd = 3.0 v, i dd = 150 ma v dd = 3.5 v, i dd = 230 ma v dd = 4.5 v, i dd = 230 ma figure 7. conversion loss vs. lo input power. 12 11 10 9 8 7 6 conversion loss (db) -12 -8 -4 0 4 8 lo input power (dbm) v dd = 4.5 v, i dd = 230 ma rf = 28 ghz, 0 dbm lo = 25 ghz, 0 dbm figure 8. conversion loss vs. v dd for various lo amplifier drain currents. 12 11 10 9 8 7 6 5 4 conversion loss (db) 2 2.5 3 3.5 4 4.5 5 v dd (volt) rf = 28 ghz, 0 dbm lo = 25 ghz, 0 dbm i dd = 150 ma i dd = 230 ma i dd = 290 ma note: all data measured on individual devices mounted in a 50 ghz test package t a = 25 c and under figure 1 condition (except where noted). this data sheet contains a variety of typical and guaranteed performance data. the information supplied should not be interpreted as a complete list of circuit specifications. in this data sheet the term typical refers to the 50th percentile performance. for additional information contact your local agilent sales representative.
www.semiconductor.agilent.com data subject to change. copyright ? 1999 agilent technologies 5966-4571e (11/99)
|
